Schottky Construction Headquarters
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The construction and reliability of Schottky diodes ...
- https://www.sciencedirect.com/science/article/pii/002627147891123X
- Jan 01, 1978 · Mkroelectron. Reliab. Vol. 17. pp. 445-455 0026-2714/78/0601-0445 02.00,,0 ~:, Pergamon Press Lid. 1978. Prinled in Greal Britain THE CONSTRUCTION AND RELIABILITY OF SCHOTTKY DIODES D. C. CROFT Telecommunications Headquarters, P.O. Research Centre, Ipswich IP5 7RE, England (Received for publication 19 July 1977) Abstraet--A description is given of the way …Cited by: 4
Schottky diode - Wikipedia
- https://en.wikipedia.org/wiki/Schottky_diode
- The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power ...Invented: Walter H. Schottky
Schottky Diode Working and Its Applications
- https://www.elprocus.com/schottky-diode-working-and-applications/
- May 25, 2016 · Schottky Diode Schottky Diode Construction. It is a unilateral junction. A metal-semiconductor junction is formed at one end and another metal-semiconductor contact is formed at the other end. It is an ideal Ohmic bidirectional contact with no potential existing between the metal and the semiconductor and it is non-rectifying. The built-in ...Estimated Reading Time: 6 mins
Schottky barrier - Wikipedia
- https://en.wikipedia.org/wiki/Schottky_junction
- Mar 08, 2004 · A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction.Schottky barriers have rectifying characteristics, suitable for use as a diode.One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by Φ B (see figure). The value of Φ B depends on the combination of metal …Estimated Reading Time: 12 mins
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